GaN-on-SiC RF power amplifier module

: Edith : 2018-10-08

Integra Technologies of El Segundo has brought out an RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems.

GaN-on-SiC.jpeg

IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32μs on, 18μs off}, 6.4% Long Term Duty Cycle) or standard Mode S (128μs, 2% Duty Cycle) pulse conditions.


It supplies a minimum of 2200W of peak output power, with typically >16 dB of gain and 57% efficiency and operates from a 50V supply voltage.


This RF power amplifier module/pallet is matched to 50-ohms at both input and output and is suitable for both 1030 and 1090 MHz.


Source from:electronicsweekly